TriQuint Releases Next-Generation Power Amplifier

September 21, 2012
By: Rory Lidstone

RF solutions supplier TriQuint Semiconductor (News - Alert), recently debuted a new multiband, multimode power amplifier (MMPA) which manages to simplify the complex RF front-end for next-generation global 3G/4G smartphones, as well as other mobile devices. Called TRIUMF, this compact, highly integrated MMPA offers best-in-class power-added efficiency, resulting in up to 15 percent more browsing time.

“As LTE (News - Alert) networks roll out, next-generation smartphones have to incorporate a growing number of frequency bands. This means device manufacturers must support the rapidly growing RF content within very small form factors — without compromising performance,” said Shane Smith, vice president of Global Marketing for Mobile Devices at TriQuint. “Our customers confirm that our new TRIUMF TQM7M9053 MMPA is optimized for these demanding applications. This integrated solution consumes 13 percent less PCB space than discrete components and simplifies routing to enhance system performance and time to market.”

As device complexity increases to meet consumer demands for faster, thinner, better devices, demand for integrated RF solutions are in turn also on the rise. MMPAs particularly have exploded in growth recently. In fact, Strategy Analytics (News - Alert) Analyst Christopher Taylor predicts the market for MMPAs will reach more than $700 million in 2016.

The new second generation TRIUMF MMPA TQM7M9053 is drop-in pin compatible with TriQuint's popular TQM7M9023 MMPA, which can be found in a number of the world's most used smartphones and tablets, such as the iPhone and iPad. Not only does the TQM7M9053 redesign offer higher efficiency, it also costs less than its predecessor.

The TQM7M9053 offers quad-band GSM/EDGE and WCDMA/LTE band support for the 3G/4G market in North America, Europe and Asia. Together with TriQuint's SAW and BAW filters, TRIUMF MMPAs deliver a complete RF front-end solution for mobile devices.

TriQuint recently received a $2.7 million contract from the Defense Advanced Research Projects Agency (DARPA) to triple the power handling performance of gallium nitride (GaN) circuits.




Edited by Jamie Epstein